NSN Part 12306839 by Bae Systems Technology Solutions And - RFQ Form
Part number 12306839 and described as Microcircuit Memory, manufactured by Bae Systems Technology Solutions And is in stock of NSN Gamut. We would like to invite you to kickstart the purchasing process for NSN part 12306839 by filling out the form below. By providing us with details such as your company name and target price, we can offer you a personalized quote.
As a result of our extensive purchasing capabilities, we are able to offer competitive pricing and fast lead times on items sourced from various leading global manufacturers, including Bae Systems Technology Solutions And. As a result of our extensive purchasing capabilities, we are able to offer competitive pricing and fast lead times on items sourced from various leading global manufacturers, including Bae Systems Technology Solutions And. We are an AS9120B, ISO 9001:2015, and FAA AC 0056B certified and accredited organization and make sure you get quality NSN part 12306839. Take the first step today towards acquiring the part 5962011882933 12306839 and other NSN components you require, and experience how we can be your strategic sourcing partner.
Specifications
Description
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NSN Information for Part Number 12306839 with NSN 5962-01-188-2933, 5962011882933
Characteristics Data of NSN 5962-01-188-2933, 5962011882933
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 960 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING200 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 3 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510245 GOVERNMENT SPECIFICATION |
