NSN Part 06004771-67 by Bae Systems Information And Electronic Systems Integration Inc - RFQ Form
Part number 06004771-67 and described as Microcircuit Memory, manufactured by Bae Systems Information And Electronic Systems Integration Inc is in stock of NSN Gamut. We would like to invite you to kickstart the purchasing process for NSN part 06004771-67 by filling out the form below. By providing us with details such as your company name and target price, we can offer you a personalized quote.
As a result of our extensive purchasing capabilities, we are able to offer competitive pricing and fast lead times on items sourced from various leading global manufacturers, including Bae Systems Information And Electronic Systems Integration Inc. As a result of our extensive purchasing capabilities, we are able to offer competitive pricing and fast lead times on items sourced from various leading global manufacturers, including Bae Systems Information And Electronic Systems Integration Inc. We are an AS9120B, ISO 9001:2015, and FAA AC 0056B certified and accredited organization and make sure you get quality NSN part 06004771-67. Take the first step today towards acquiring the part 5962012687768 06004771-67 and other NSN components you require, and experience how we can be your strategic sourcing partner.
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NSN Information for Part Number 06004771-67 with NSN 5962-01-268-7768, 5962012687768
Characteristics Data of NSN 5962-01-268-7768, 5962012687768
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING794 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDSCHOTTKY AND PROGRAMMABLE AND MONOLITHIC AND BIPOLAR |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
